GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; G. C. Chi; J. M. Tsai

doi:10.1063/1.1570519

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi, J. M. Tsai

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51 引文斯高帕斯（Scopus）

摘要

The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.

原文	English
頁（從 - 到）	2913-2915
頁數	3
期刊	Applied Physics Letters
卷	82
發行號	17
DOIs	https://doi.org/10.1063/1.1570519
出版狀態	Published - 2003 4月 28

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.1570519

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abstract = "The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.",

author = "Lee, {M. L.} and Sheu, {J. K.} and Lai, {W. C.} and Chang, {S. J.} and Su, {Y. K.} and Chen, {M. G.} and Kao, {C. J.} and Chi, {G. C.} and Tsai, {J. M.}",

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AU - Lee, M. L.

AU - Sheu, J. K.

AU - Lai, W. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, M. G.

AU - Kao, C. J.

AU - Chi, G. C.

AU - Tsai, J. M.

PY - 2003/4/28

Y1 - 2003/4/28

N2 - The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.

AB - The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

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