GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

S. J. Chang; W. Y. Weng; W. C. Lai; T. J. Hsueh; S. C. Shei; X. F. Zeng; S. L. Wu

doi:10.1149/1.3306228

GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

S. J. Chang, W. Y. Weng, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.

原文	English
頁（從 - 到）	J120-J124
期刊	Journal of the Electrochemical Society
卷	157
發行號	4
DOIs	https://doi.org/10.1149/1.3306228
出版狀態	Published - 2010

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
材料化學
表面、塗料和薄膜
電化學
可再生能源、永續發展與環境

UN SDG

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10.1149/1.3306228

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abstract = "UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.",

author = "Chang, {S. J.} and Weng, {W. Y.} and Lai, {W. C.} and Hsueh, {T. J.} and Shei, {S. C.} and Zeng, {X. F.} and Wu, {S. L.}",

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language = "English",

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T1 - GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

AU - Chang, S. J.

AU - Weng, W. Y.

AU - Lai, W. C.

AU - Hsueh, T. J.

AU - Shei, S. C.

AU - Zeng, X. F.

AU - Wu, S. L.

PY - 2010

Y1 - 2010

N2 - UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.

AB - UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.

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DO - 10.1149/1.3306228

M3 - Article

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SN - 0013-4651

VL - 157

SP - J120-J124

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 4

ER -

GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

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All Science Journal Classification (ASJC) codes

UN SDG

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