GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

Shoou-Jinn Chang, W. Y. Weng, Wei-Chi Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu

研究成果: Article

1 引文 (Scopus)

摘要

UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.

原文English
期刊Journal of the Electrochemical Society
157
發行號4
DOIs
出版狀態Published - 2010 三月 26

指紋

Photodetectors
caps
Leakage currents
photometers
rejection
leakage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

引用此文

Chang, Shoou-Jinn ; Weng, W. Y. ; Lai, Wei-Chi ; Hsueh, T. J. ; Shei, S. C. ; Zeng, X. F. ; Wu, S. L. / GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer. 於: Journal of the Electrochemical Society. 2010 ; 卷 157, 編號 4.
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GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer. / Chang, Shoou-Jinn; Weng, W. Y.; Lai, Wei-Chi; Hsueh, T. J.; Shei, S. C.; Zeng, X. F.; Wu, S. L.

於: Journal of the Electrochemical Society, 卷 157, 編號 4, 26.03.2010.

研究成果: Article

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AU - Shei, S. C.

AU - Zeng, X. F.

AU - Wu, S. L.

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