GaN Schottky barrier photodetectors with multi-MgN/GaN buffer

K. H. Lee; P. C. Chang; S. J. Chang; Y. C. Wang; C. H. Kuo; S. L. Wu

doi:10.1109/EDSSC.2008.4760683

GaN Schottky barrier photodetectors with multi-MgN/GaN buffer

K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Wang, C. H. Kuo, S. L. Wu

研究成果: Conference contribution

摘要

GaN Schottky barrier photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a multi-MgN/GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN PDs by using the multi-MgN/GaN buffer layer. With a 2 V reverse bias, it was found that the reverse leakage currents measured from PDs with single LT GaN buffer layer and that with multi-MgN/GaN buffer layer were 4.57×10^-6 and 1.44×10^-12 A, respectively. It was also found that we could use the multi-MgN/GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

原文	English
主出版物標題	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760683
出版狀態	Published - 2008 十二月 1
事件	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China 持續時間: 2008 十二月 8 → 2008 十二月 10

出版系列

名字	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
國家	China
城市	Hong Kong
期間	08-12-08 → 08-12-10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

存取文件

10.1109/EDSSC.2008.4760683

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引用此

Lee, K. H., Chang, P. C., Chang, S. J., Wang, Y. C., Kuo, C. H., & Wu, S. L. (2008). GaN Schottky barrier photodetectors with multi-MgN/GaN buffer. 於 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC [4760683] (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760683

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title = "GaN Schottky barrier photodetectors with multi-MgN/GaN buffer",

abstract = "GaN Schottky barrier photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a multi-MgN/GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN PDs by using the multi-MgN/GaN buffer layer. With a 2 V reverse bias, it was found that the reverse leakage currents measured from PDs with single LT GaN buffer layer and that with multi-MgN/GaN buffer layer were 4.57×10-6 and 1.44×10-12 A, respectively. It was also found that we could use the multi-MgN/GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.",

author = "Lee, {K. H.} and Chang, {P. C.} and Chang, {S. J.} and Wang, {Y. C.} and Kuo, {C. H.} and Wu, {S. L.}",

year = "2008",

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language = "English",

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Lee, KH, Chang, PC, Chang, SJ, Wang, YC, Kuo, CH & Wu, SL 2008, GaN Schottky barrier photodetectors with multi-MgN/GaN buffer. 於 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760683, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08-12-08. https://doi.org/10.1109/EDSSC.2008.4760683

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AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, S. J.

AU - Wang, Y. C.

AU - Kuo, C. H.

AU - Wu, S. L.

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N2 - GaN Schottky barrier photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a multi-MgN/GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN PDs by using the multi-MgN/GaN buffer layer. With a 2 V reverse bias, it was found that the reverse leakage currents measured from PDs with single LT GaN buffer layer and that with multi-MgN/GaN buffer layer were 4.57×10-6 and 1.44×10-12 A, respectively. It was also found that we could use the multi-MgN/GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

AB - GaN Schottky barrier photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a multi-MgN/GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and thus improve crystal quality of the GaN PDs by using the multi-MgN/GaN buffer layer. With a 2 V reverse bias, it was found that the reverse leakage currents measured from PDs with single LT GaN buffer layer and that with multi-MgN/GaN buffer layer were 4.57×10-6 and 1.44×10-12 A, respectively. It was also found that we could use the multi-MgN/GaN buffer layer to suppress photoconductive gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

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