GaN Schottky barrier photodetectors with SiNGaN nucleation layer

GaN Schottky barrier photodetectors with SiNGaN nucleation layer were fabricated. It was found that leakage current was much smaller and much less bias dependent for the photodetector with SiNGaN nucleation layer, as compared to the photodetector with conventional low-temperature GaN nucleation layer. It was also found that effective Schottky barrier height increased from 1.27 to 1.53 eV with the insertion of the SiN layer. Furthermore, it was found that the authors can effectively suppress internal gain of the detector and enhance ultraviolet to visible rejection ratio by using the SiNGaN nucleation layer.