GaN ultraviolet photodetector with a low-temperature AlN cap layer

Shoou-Jinn Chang, C. L. Yu, P. C. Chang, Yu-Cheng Lin

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We present the characteristics of GaN ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN cap layer. With the LT-AlN cap layer, it was found that reverse leakage current became smaller by four orders of magnitude. With an incident wavelength of 360 nm, it was found that the responsivity under zero bias for the proposed PD was 0.063 AW, which corresponds to a quantum efficiency of 21.7%. Furthermore, it was found that the UV to visible rejection ratio of the PD with a LT-AlN cap layer was larger than that of a conventional Schottky barrier PD.

原文English
頁(從 - 到)196-198
頁數3
期刊Electrochemical and Solid-State Letters
10
發行號6
DOIs
出版狀態Published - 2007 四月 13

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Materials Science(all)

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