GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes

G. M. Wu, C. W. Tsai, C. F. Shih, N. C. Chen, W. H. Feng

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

The various buffer layer structures have been investigated to decrease the dislocation density of GaN/Si(111) epilayer for light emitting diodes using TEM, SEM and double crystal X-ray diffraction. Low temperature AlN/AlGaN with 10 period AlGaN/GaN superlattice has been shown to be effective in reducing the dislocation density and can improve the crystal quality. The full width at half maximum (FWHM) is 611 arcsec. The surface pit density is greatly reduced and the GaN/Si(111) epilayer is free of crack. In addition, the dislocation bending and pairing with equivalent neighboring dislocation is responsible for reducing the dislocation density.

原文English
主出版物標題Nanoscience and Technology
發行者Trans Tech Publications Ltd
頁面587-590
頁數4
版本PART 1
ISBN(列印)3908451302, 9783908451303
DOIs
出版狀態Published - 2007 一月 1
事件China International Conference on Nanoscience and Technology, ChinaNANO 2005 - Beijing, China
持續時間: 2005 六月 92005 六月 11

出版系列

名字Solid State Phenomena
號碼PART 1
121-123
ISSN(列印)1012-0394

Other

OtherChina International Conference on Nanoscience and Technology, ChinaNANO 2005
國家China
城市Beijing
期間05-06-0905-06-11

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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    Wu, G. M., Tsai, C. W., Shih, C. F., Chen, N. C., & Feng, W. H. (2007). GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes. 於 Nanoscience and Technology (PART 1 編輯, 頁 587-590). (Solid State Phenomena; 卷 121-123, 編號 PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-30-2.587