Gas cluster ion beam application to porous low-k dielectrics

John Hautala, Greg Book, Brian White, Chris Doughty, Dung-Ching Perng, Terukazu Kokubo

研究成果: Conference article

3 引文 斯高帕斯(Scopus)

摘要

Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

原文English
頁(從 - 到)461-467
頁數7
期刊Advanced Metallization Conference (AMC)
出版狀態Published - 2003 十二月 1
事件Advanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada
持續時間: 2003 十月 212003 十月 23

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

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  • 引用此

    Hautala, J., Book, G., White, B., Doughty, C., Perng, D-C., & Kokubo, T. (2003). Gas cluster ion beam application to porous low-k dielectrics. Advanced Metallization Conference (AMC), 461-467.