摘要
Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 461-467 |
| 頁數 | 7 |
| 期刊 | Advanced Metallization Conference (AMC) |
| 出版狀態 | Published - 2003 |
| 事件 | Advanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada 持續時間: 2003 10月 21 → 2003 10月 23 |
All Science Journal Classification (ASJC) codes
- 一般化學工程
指紋
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