Gas sensing properties of ZnO: Al thin films prepared by RF magnetron sputtering

Gaik Teoh Lay, Ming Chen Hong, Yen-Hsun Su, Hao Lai Wei, Min Chou Shih, Hsiung Hon Min

研究成果: Conference contribution

摘要

The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ∼20 at an operating temperature of 250. The high sensitivity, fast recovery, and reliability suggest that ZnO: Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.

原文English
主出版物標題ICSE 2006
主出版物子標題2006 IEEE International Conference on Semiconductor Electronics, Proceedings
頁面142-145
頁數4
DOIs
出版狀態Published - 2006 十二月 1
事件2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
持續時間: 2006 十一月 292006 十二月 1

出版系列

名字IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
國家Malaysia
城市Kuala Lumpur
期間06-11-2906-12-01

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此

Lay, G. T., Hong, M. C., Su, Y-H., Wei, H. L., Shih, M. C., & Min, H. H. (2006). Gas sensing properties of ZnO: Al thin films prepared by RF magnetron sputtering. 於 ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (頁 142-145). [4266586] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.381036