Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

J. L. Liu, S. J. Cai, G. L. Jin, Y. S. Tang, K. L. Wang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.

原文English
頁(從 - 到)477-479
頁數3
期刊Superlattices and Microstructures
25
發行號1-2
DOIs
出版狀態Published - 1999 1月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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