Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

Zheng Da Huang; Wen Yin Weng; Shoou Jinn Chang; Chiu Jung Chiu; Ting Jen Hsueh; San Lein Wu

doi:10.1109/JSEN.2013.2264457

Ga₂/ O₃/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

Zheng Da Huang, Wen Yin Weng, Shoou Jinn Chang, Chiu Jung Chiu, Ting Jen Hsueh, San Lein Wu

研究成果: Article › 同行評審

35 引文斯高帕斯（Scopus）

摘要

β Ga₃ O₃/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.

原文	English
文章編號	6517889
頁（從 - 到）	3462-3467
頁數	6
期刊	IEEE Sensors Journal
卷	13
發行號	9
DOIs	https://doi.org/10.1109/JSEN.2013.2264457
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

儀器
電氣與電子工程

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10.1109/JSEN.2013.2264457

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@article{ea1432488d8d452fb6a29cc533445285,

title = "Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector",

abstract = "β Ga3 O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.",

author = "Huang, {Zheng Da} and Weng, {Wen Yin} and Chang, {Shoou Jinn} and Chiu, {Chiu Jung} and Hsueh, {Ting Jen} and Wu, {San Lein}",

year = "2013",

doi = "10.1109/JSEN.2013.2264457",

language = "English",

volume = "13",

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journal = "IEEE Sensors Journal",

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TY - JOUR

T1 - Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

AU - Huang, Zheng Da

AU - Weng, Wen Yin

AU - Chang, Shoou Jinn

AU - Chiu, Chiu Jung

AU - Hsueh, Ting Jen

AU - Wu, San Lein

PY - 2013

Y1 - 2013

N2 - β Ga3 O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.

AB - β Ga3 O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.

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DO - 10.1109/JSEN.2013.2264457

M3 - Article

AN - SCOPUS:84882391930

SN - 1530-437X

VL - 13

SP - 3462

EP - 3467

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 9

M1 - 6517889

ER -

Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

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Ga₂/ O₃/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector