Vapor cooling condensation system was used to sequentially deposit i-Ga2O3 and n-Ga2O3:Si films on the p-GaN layer that was grown with a metalorganic chemical vapor deposition system. After it was annealed in a nitrogen ambience at 900 °C for 60 min, the p-GaN/i-Ga2O3/n-Ga2O3:Si structure was utilized to fabricate Ga2O3-based p-i-n solar-blind deep ultraviolet light-emitting diodes (DUV-LEDs). The atomic percentages of gallium, silicon, and oxygen in the annealed n-Ga2O3:Si films (as measured by an energy dispersive spectrometer) were 20.73%, 19.85%, and 59.42%, respectively. The electron concentration, electron mobility, and optical bandgap energy of the annealed i-Ga2O3 films and the annealed n-Ga2O3:Si films were 1.0 × 1015 cm−3 and 2.2 × 1017 cm−3, 16.0 cm2/V-s and 7.8 cm2/V-s, and 4.94 eV and 5.20 eV, respectively. The peak emission wavelength of the aforementioned Ga2O3-based p-i-n solar-blind DUV-LEDs was 248 nm.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics