Ga₂O₃ films for photoelectrochemical hydrogen generation

The authors report the use of RF sputtered Ga₂O₃ films prepared on SiO₂/Si template to serve as the photoelectrode for photoelectrochemical (PEC) water splitting. It was found that photocurrent observed from the 900°C-annealed Ga₂O₃ film was more than 3 orders of magnitude larger than its dark current at zero bias voltage. It was also found that no decomposition and/or corrosion occurred on the surface of the 900°C-annealed Ga₂O₃ film. This suggests that Ga₂O₃ film has the potential to serve as a reliable photocathode for hydrogen generation.