Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions

Endre Tóvári, Péter Makk, Ming Hao Liu, Peter Rickhaus, Zoltán Kovács-Krausz, Klaus Richter, Christian Schönenberger, Szabolcs Csonka

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.

原文English
頁(從 - 到)19910-19916
頁數7
期刊Nanoscale
8
發行號47
DOIs
出版狀態Published - 2016 12月 21

All Science Journal Classification (ASJC) codes

  • 一般材料科學

指紋

深入研究「Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions」主題。共同形成了獨特的指紋。

引用此