TY - JOUR
T1 - Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions
AU - Tóvári, Endre
AU - Makk, Péter
AU - Liu, Ming Hao
AU - Rickhaus, Peter
AU - Kovács-Krausz, Zoltán
AU - Richter, Klaus
AU - Schönenberger, Christian
AU - Csonka, Szabolcs
N1 - Publisher Copyright:
© 2016 The Royal Society of Chemistry.
PY - 2016/12/21
Y1 - 2016/12/21
N2 - The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.
AB - The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.
UR - https://www.scopus.com/pages/publications/85000501176
UR - https://www.scopus.com/pages/publications/85000501176#tab=citedBy
U2 - 10.1039/c6nr05100f
DO - 10.1039/c6nr05100f
M3 - Article
AN - SCOPUS:85000501176
SN - 2040-3364
VL - 8
SP - 19910
EP - 19916
JO - Nanoscale
JF - Nanoscale
IS - 47
ER -