Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (Ig) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot-carrier reliability of LDMOS transistors.
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