Gate current dependent hot-carrier-induced degradation in LDMOS transistors

J. F. Chen; K. S. Tian; S. Y. Chen; J. R. Lee; K. M. Wu; T. Y. Huang; C. M. Liu

doi:10.1049/el:20080520

Gate current dependent hot-carrier-induced degradation in LDMOS transistors

J. F. Chen, K. S. Tian, S. Y. Chen, J. R. Lee, K. M. Wu, T. Y. Huang, C. M. Liu

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (I_g) consists mainly of electron injection, I_g is found to correlate with device degradation well. Such I_g dependent device degradation suggests that I_g should be examined in evaluating the hot-carrier reliability of LDMOS transistors.

原文	English
期刊	Electronics Letters
卷	44
發行號	16
DOIs	https://doi.org/10.1049/el:20080520
出版狀態	Published - 2008 8月 15

All Science Journal Classification (ASJC) codes

電氣與電子工程

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10.1049/el:20080520

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abstract = "Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (Ig) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot-carrier reliability of LDMOS transistors.",

author = "Chen, {J. F.} and Tian, {K. S.} and Chen, {S. Y.} and Lee, {J. R.} and Wu, {K. M.} and Huang, {T. Y.} and Liu, {C. M.}",

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doi = "10.1049/el:20080520",

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AU - Chen, J. F.

AU - Tian, K. S.

AU - Chen, S. Y.

AU - Lee, J. R.

AU - Wu, K. M.

AU - Huang, T. Y.

AU - Liu, C. M.

PY - 2008/8/15

Y1 - 2008/8/15

N2 - Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (Ig) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot-carrier reliability of LDMOS transistors.

AB - Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (Ig) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot-carrier reliability of LDMOS transistors.

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VL - 44

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

Gate current dependent hot-carrier-induced degradation in LDMOS transistors

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