Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

Chih Lung Lin; Fu Hsing Chen; Ming Xun Wang; Po Cheng Lai; Chin Hsien Tseng

doi:10.1109/TED.2017.2710180

Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

Chih Lung Lin
, Fu Hsing Chen
, Ming Xun Wang
, Po Cheng Lai
, Chin Hsien Tseng

電機工程學系

研究成果: Article › 同行評審

38 引文斯高帕斯（Scopus）

摘要

This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

原文	English
文章編號	7947093
頁（從 - 到）	3494-3497
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	64
發行號	8
DOIs	https://doi.org/10.1109/TED.2017.2710180
出版狀態	Published - 2017 8月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/TED.2017.2710180

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title = "Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays",

abstract = "This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.",

author = "Lin, \{Chih Lung\} and Chen, \{Fu Hsing\} and Wang, \{Ming Xun\} and Lai, \{Po Cheng\} and Tseng, \{Chin Hsien\}",

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year = "2017",

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doi = "10.1109/TED.2017.2710180",

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AU - Lin, Chih Lung

AU - Chen, Fu Hsing

AU - Wang, Ming Xun

AU - Lai, Po Cheng

AU - Tseng, Chin Hsien

PY - 2017/8

Y1 - 2017/8

N2 - This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

AB - This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

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UR - https://www.scopus.com/pages/publications/85021819603#tab=citedBy

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 7947093

ER -

Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

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