Gate-Recessed AlGaN/GaN ISFET Urea Biosensor Fabricated by Photoelectrochemical Method

Ching Ting Lee, Ying Shuo Chiu

研究成果: Article

12 引文 斯高帕斯(Scopus)

摘要

To develop the high sensitive ion-sensitive field-effect-transistor (ISFET) urea biosensors, the AlGaN/GaN heterostructure with high electron sheet carrier concentration was utilized in this paper. Furthermore, the photoelectrochemical etching method and the oxidation method were, respectively, applied to recess the gate region and directly grow the GaxAlyO3 sensing membrane for enhancing sensing performances. Due to the progress of controlling ability from the gate-recessed region, the resulting characteristics of the gate-recessed AlGaN/GaN ISFET urea biosensors, including transconductance and sensing sensitivity, were obviously improved compared with the planar gate AlGaN/GaN ISFET urea biosensors. The maximum transconductance value and the urea sensitivity of the gate-recessed AlGaN/GaN ISFET urea biosensors were, respectively, improved to 75.9 mS/mm and 18.15 mA/pCurea compared with that of the planar gate ones. Compared with the planar gate structure, the maximum transconductance value and the urea sensitivity of the gate-recessed structure were improved 17.7% and 40.2%, respectively. Furthermore, the urea biosensors were, respectively, measured in the solution with various common interfering ions (glucose, K+, and Na+) to verify stability and reliability.

原文English
文章編號7349103
頁(從 - 到)1518-1523
頁數6
期刊IEEE Sensors Journal
16
發行號6
DOIs
出版狀態Published - 2016 三月 15

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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