Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

Han Yin Liu, Ching Sung Lee, Chih Wei Lin, Meng Hsueh Chiang, Wei Chou Hsu

研究成果: Conference contribution

1 引文 (Scopus)

摘要

Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F- doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously for the E-mode AlGaN/GaN HEMT. Recently, the E-mode AlGaN/GaN MOSHEMT is realized by integrating two of the above methods to obtain higher Ids and more positive Vt [6, 7]. This work proposes gate structure engineering by integrating three processes, including gate recess, fluorine doped barrier layer and in-situ chlorine doped Al2O3 gate dielectric layer to realize the E-mode AlGaN/GaN MOSHEMT. The present MOSHEMT shows higher output current density and more positive threshold voltage than the MOSHEMTs which use gate recess and fluorine doping techniques.

原文English
主出版物標題75th Annual Device Research Conference, DRC 2017
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509063277
DOIs
出版狀態Published - 2017 八月 1
事件75th Annual Device Research Conference, DRC 2017 - South Bend, United States
持續時間: 2017 六月 252017 六月 28

出版系列

名字Device Research Conference - Conference Digest, DRC
ISSN(列印)1548-3770

Other

Other75th Annual Device Research Conference, DRC 2017
國家United States
城市South Bend
期間17-06-2517-06-28

指紋

High electron mobility transistors
Threshold voltage
Fluorine
Doping (additives)
Gate dielectrics
Power electronics
Chlorine
Current density

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Liu, H. Y., Lee, C. S., Lin, C. W., Chiang, M. H., & Hsu, W. C. (2017). Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT. 於 75th Annual Device Research Conference, DRC 2017 [7999446] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2017.7999446
Liu, Han Yin ; Lee, Ching Sung ; Lin, Chih Wei ; Chiang, Meng Hsueh ; Hsu, Wei Chou. / Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT. 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. (Device Research Conference - Conference Digest, DRC).
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abstract = "Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F- doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously for the E-mode AlGaN/GaN HEMT. Recently, the E-mode AlGaN/GaN MOSHEMT is realized by integrating two of the above methods to obtain higher Ids and more positive Vt [6, 7]. This work proposes gate structure engineering by integrating three processes, including gate recess, fluorine doped barrier layer and in-situ chlorine doped Al2O3 gate dielectric layer to realize the E-mode AlGaN/GaN MOSHEMT. The present MOSHEMT shows higher output current density and more positive threshold voltage than the MOSHEMTs which use gate recess and fluorine doping techniques.",
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Liu, HY, Lee, CS, Lin, CW, Chiang, MH & Hsu, WC 2017, Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT. 於 75th Annual Device Research Conference, DRC 2017., 7999446, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 17-06-25. https://doi.org/10.1109/DRC.2017.7999446

Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT. / Liu, Han Yin; Lee, Ching Sung; Lin, Chih Wei; Chiang, Meng Hsueh; Hsu, Wei Chou.

75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999446 (Device Research Conference - Conference Digest, DRC).

研究成果: Conference contribution

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AU - Liu, Han Yin

AU - Lee, Ching Sung

AU - Lin, Chih Wei

AU - Chiang, Meng Hsueh

AU - Hsu, Wei Chou

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F- doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously for the E-mode AlGaN/GaN HEMT. Recently, the E-mode AlGaN/GaN MOSHEMT is realized by integrating two of the above methods to obtain higher Ids and more positive Vt [6, 7]. This work proposes gate structure engineering by integrating three processes, including gate recess, fluorine doped barrier layer and in-situ chlorine doped Al2O3 gate dielectric layer to realize the E-mode AlGaN/GaN MOSHEMT. The present MOSHEMT shows higher output current density and more positive threshold voltage than the MOSHEMTs which use gate recess and fluorine doping techniques.

AB - Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F- doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously for the E-mode AlGaN/GaN HEMT. Recently, the E-mode AlGaN/GaN MOSHEMT is realized by integrating two of the above methods to obtain higher Ids and more positive Vt [6, 7]. This work proposes gate structure engineering by integrating three processes, including gate recess, fluorine doped barrier layer and in-situ chlorine doped Al2O3 gate dielectric layer to realize the E-mode AlGaN/GaN MOSHEMT. The present MOSHEMT shows higher output current density and more positive threshold voltage than the MOSHEMTs which use gate recess and fluorine doping techniques.

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Liu HY, Lee CS, Lin CW, Chiang MH, Hsu WC. Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT. 於 75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7999446. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2017.7999446