Ge dot mid-infrared photodetectors

Song Tong, Joo Young Lee, Hyung Jun Kim, Fei Liu, Kang L. Wang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Si-based normal incident mid-infrared photodetectors using Ge dots were investigated. P-I-P structures of boron-doped Ge dots embedded in the intrinsic region were grown using solid source molecular beam epitaxy. The dark current was strongly dependent on the doping level in Ge dot. The structure grown at 700 °C exhibited photoresponse peaking at 3.5 μm. FTIR measurements on identical structure showed an absorption band consistent with the photocurrent spectra. At lower temperatures, the response intensity decreased due to freeze-out of the holes. The devices also showed photovoltaic effect. The response increased with increasing bias.

原文English
頁(從 - 到)1097-1100
頁數4
期刊Optical Materials
27
發行號5
DOIs
出版狀態Published - 2005 2月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電腦科學(全部)
  • 原子與分子物理與光學
  • 光譜
  • 物理與理論化學
  • 有機化學
  • 無機化學
  • 電氣與電子工程

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