Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

C. J. Su, T. C. Hong, Y. C. Tsou, F. J. Hou, P. J. Sung, M. S. Yeh, C. C. Wan, K. H. Kao, Y. T. Tang, C. H. Chiu, C. J. Wang, S. T. Chung, T. Y. You, Y. C. Huang, C. T. Wu, K. L. Lin, G. L. Luo, K. P. Huang, Y. J. Lee, T. S. ChaoW. F. Wu, G. W. Huang, J. M. Shieh, W. K. Yeh, Y. H. Wang

研究成果: Conference contribution

11 引文 斯高帕斯(Scopus)

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