Ge nanowire transistors with high-quality interfaces by atomic-scale thermal annealing

Jianshi Tang, Chiu Yen Wang, Lih Juann Chen, Kang L. Wang

研究成果: Conference contribution

摘要

High-performance Ge nanowire transistors with single-crystalline germanides as Schottky source/drain contacts were fabricated via the solid-state reaction between a single-crystalline Ge nanowire and two Ni contact pads using rapid thermal annealing. The formed high-quality germanides show atomically clean epitaxial interface with the Ge nanowire. The effect of oxide confinement was also studied to control the growth of nickel germanides, and further to passivate the Ge nanowire surface. In addition, a room-temperature ferromagnetic germanide, Mn5Ge3, was formed in the fabrication of Mn5Ge3/Ge/Mn5Ge3 nanowire transistors using a similar approach. Temperature-dependent I-V measurements were performed to extract a Schottky barrier height of 0.25 eV for Mn 5Ge3 conducting to p-Ge, which suggested promising spin injection from Mn5Ge3 into Ge nanowires. Our results open up exciting opportunities to fabricate high-performance Ge nanowire transistors and further explore spintronics applications in Ge nanowire heterostructures with high-quality epitaxial interfaces.

原文English
主出版物標題2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
出版狀態Published - 2012
事件2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
持續時間: 2012 八月 202012 八月 23

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
ISSN(列印)1944-9399
ISSN(電子)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
國家/地區United Kingdom
城市Birmingham
期間12-08-2012-08-23

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 電氣與電子工程
  • 材料化學
  • 凝聚態物理學

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