Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

Shouzhong Peng, Weisheng Zhao, Junfeng Qiao, Li Su, Jiaqi Zhou, Hongxin Yang, Qianfan Zhang, Youguang Zhang, Cecile Grezes, Pedram Khalili Amiri, Kang L. Wang

研究成果: Article同行評審

68 引文 斯高帕斯(Scopus)

摘要

Magnetic tunnel junction based on the CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here, we use the first-principles calculations to investigate the magnetic anisotropy energy (MAE) of the MgO/CoFe/capping layer structures, where the capping materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, and Au and 6p metals Tl, Pb, and Bi. We demonstrate that it is feasible to enhance PMA by using proper capping materials. Relatively large PMA is found in the structures with the capping materials of Hf, Ta, Os, Ir, and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve the advanced-node STT-MRAM with high thermal stability.

原文English
文章編號072403
期刊Applied Physics Letters
110
發行號7
DOIs
出版狀態Published - 2017 2月 13

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

指紋

深入研究「Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures」主題。共同形成了獨特的指紋。

引用此