Global parameter extraction for a multi-gate MOSFETs compact model

Shijing Yao, Tanvir H. Morshed, Darsen Lu, Sriramkumar Venugopalan, Weize Xiong, C. R. Cleavelin, Ali M. Niknejad, Chenming Hu

研究成果: Conference contribution

13 引文 斯高帕斯(Scopus)

摘要

A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.

原文English
主出版物標題2010 International Conference on Microelectronic Test Structures, 23rd IEEE ICMTS Conference Proceedings
頁面194-197
頁數4
DOIs
出版狀態Published - 2010 6月 29
事件2010 International Conference on Microelectronic Test Structures, ICMTS 2010 - Hiroshima, Japan
持續時間: 2010 3月 222010 3月 25

出版系列

名字IEEE International Conference on Microelectronic Test Structures

Other

Other2010 International Conference on Microelectronic Test Structures, ICMTS 2010
國家/地區Japan
城市Hiroshima
期間10-03-2210-03-25

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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