TY - GEN
T1 - Global parameter extraction for a multi-gate MOSFETs compact model
AU - Yao, Shijing
AU - Morshed, Tanvir H.
AU - Lu, Darsen
AU - Venugopalan, Sriramkumar
AU - Xiong, Weize
AU - Cleavelin, C. R.
AU - Niknejad, Ali M.
AU - Hu, Chenming
PY - 2010/6/29
Y1 - 2010/6/29
N2 - A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.
AB - A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=77953882299&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77953882299&partnerID=8YFLogxK
U2 - 10.1109/ICMTS.2010.5466821
DO - 10.1109/ICMTS.2010.5466821
M3 - Conference contribution
AN - SCOPUS:77953882299
SN - 9781424469154
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 194
EP - 197
BT - 2010 International Conference on Microelectronic Test Structures, 23rd IEEE ICMTS Conference Proceedings
T2 - 2010 International Conference on Microelectronic Test Structures, ICMTS 2010
Y2 - 22 March 2010 through 25 March 2010
ER -