Grain boundary scattering for temperature coefficient of resistance (TCR) behaviour of Ta-Si-N thin films

Chen-Kuei Chung, A. Nautiyal, T. S. Chen, Y. L. Chang

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

In this study, we have investigated the electrical properties of Ta xSiyNz thin films deposited by reactive co-sputtering at different nitrogen flow ratios. The electrical resistivity and temperature coefficient of resistance (TCR) were measured by an I-V measurement system including the four-point probe from 30 to 100 °C. The results indicated that the electrical resistivity decreased with increasing temperature, i.e. negative TCR, in each film prepared at different N2 flow ratios. The phase formation of a Ta-Si-N film at different N2 flow ratios (5-30%), as well as the change in microstructure from a symmetric broad peak to an asymmetric peak, was studied by a grazing incident x-ray diffractometer. In view of the fact that the grain size increases with increasing N2 flow ratio, it would be expected that increasing resistivity and magnitude of negative TCR with increasing grain size nature may be due to scattering of electrons by the grain boundaries. It is probable that coarse grained material of Ta-Si-N with amorphous-like microstructure has a higher electrical resistivity due to the high ratio of the grain boundary area and increase in non-metallic amorphous SiNx. The electrical properties of these films are also discussed by the grain boundary scattering model.

原文English
文章編號185404
期刊Journal of Physics D: Applied Physics
41
發行號18
DOIs
出版狀態Published - 2008 9月 21

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 聲學與超音波
  • 表面、塗料和薄膜

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