Graphene Induced Diamond Nucleation on Tungsten

Yonhua Tzeng, Chih Chun Chang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Chemical vapor deposition (CVD) of a diamond film on a non-diamond substrate begins with the insertion of diamond seeds or the formation of diamond nuclei on the substrate. For the deposition of a smooth, large-area and pin-hole free diamond film that adheres well to the substrate, diamond seeds or nuclei need to be of high density, uniformly distributed and adhere well to the substrate. Diamond seeding is not a diamond nucleation process. Bias enhanced nucleation (BEN) is the most effective means of heterogeneous nucleation of diamond for CVD diamond. It is based on a negative biasing voltage between the substrate and the diamond CVD plasma to accelerate positive ions from the plasma to bombard the substrate. Both direct diamond seeding and BEN have technical barriers in practical applications. New diamond nucleation techniques are desired. This paper reports novel heterogenous diamond nucleation along edge line of graphene on tungsten leading to the deposition of continuous diamond films. Based on experimental observation, a diamond nucleation mechanism assisted by sp3 C-W bonds at graphene edge is proposed. It is wished that scientists will become interested in revealing the precise diamond nucleation mechanism. With that, further optimization of this invention may lead to a new, complementary diamond nucleation process for practical deposition of diamond films.

原文English
文章編號9258917
頁(從 - 到)117-127
頁數11
期刊IEEE Open Journal of Nanotechnology
1
DOIs
出版狀態Published - 2020

All Science Journal Classification (ASJC) codes

  • 電腦科學應用
  • 電氣與電子工程
  • 電子、光磁材料
  • 材料化學

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