Growth and characterization of a-plane (1120) GaN films on (010) LiGaO ₂ substrate by chemical vapor deposition

Keyphrases

• Chemical Vapor Deposition 100%
• GaN Films 100%
• A-plane 100%
• Transmission Electron Microscopy 66%
• GaN Epilayer 66%
• LiGaO2 66%
• Surface Morphology 33%
• X Ray Diffraction 33%
• Growth Temperature 33%
• Exciton Emission 33%
• Growth Characteristics 33%
• Structural Properties 33%
• Scanning Electron Microscopy 33%
• Chemical Vapor Deposition Method 33%
• Structural Relationship 33%
• Lattice Matching 33%
• X-ray Transmission 33%
• Donor Bound Exciton 33%
• Low-temperature Photoluminescence 33%
• Yellow Emission 33%
• Neutral Donors 33%

Material Science

• Film 100%
• Chemical Vapor Deposition 100%
• Epilayers 66%
• Transmission Electron Microscopy 66%
• Scanning Electron Microscopy 33%
• Surface Morphology 33%
• X-Ray Diffraction 33%
• Structural Property 33%
• Photoluminescence 33%