Growth and characterization of BiFeO3 film for novel device applications

H. H. Kim, J. H. Dho, X. Qi, S. K. Kang, J. L. MacManus-Driscoll, D. J. Kang, K. N. Kim, M. G. Blamire

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Among multiferroic materials, BiFeO 3 (BFO) is much attractive owing to its high Curie temperature (T c ) and Neel temperature (T N ), which presents opportunities for potential device applications at room temperature. Single phase and epitaxial BFO thin films were deposited on SrRuO 3 /SrTiO 3 substrates by pulsed-laser deposition method. BFO film showed the remnant polarization of as large as 45 C/cm 2 and strong immunity for the fatigue cycles up to 10 9 . In addition, the antiferromagnetic nature of BFO film was confirmed by clear appearance of exchange bias of 50 Oe in spin valve system. And, based on the observed multiferroic properties of BFO film, we proposed a novel multi-bit memory cell.

原文English
頁(從 - 到)157-163
頁數7
期刊Ferroelectrics
333
DOIs
出版狀態Published - 2006 五月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學

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