Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application

Chih Jen Hsiao, Ramesh Kumar Kakkerla, Po Chun Chang, Franky Juanda Lumbantoruan, Tsu Ting Lee, Yueh Chin Lin, Shoou Jinn Chang, Edward Yi Chang

研究成果: Article

1 引文 (Scopus)

摘要

In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.

原文English
文章編號162108
期刊Applied Physics Letters
111
發行號16
DOIs
出版狀態Published - 2017 十月 16

指紋

metalorganic chemical vapor deposition
capacitance-voltage characteristics
carrier mobility
CMOS
surface roughness

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

Hsiao, C. J., Kakkerla, R. K., Chang, P. C., Lumbantoruan, F. J., Lee, T. T., Lin, Y. C., ... Chang, E. Y. (2017). Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application. Applied Physics Letters, 111(16), [162108]. https://doi.org/10.1063/1.5008737
Hsiao, Chih Jen ; Kakkerla, Ramesh Kumar ; Chang, Po Chun ; Lumbantoruan, Franky Juanda ; Lee, Tsu Ting ; Lin, Yueh Chin ; Chang, Shoou Jinn ; Chang, Edward Yi. / Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application. 於: Applied Physics Letters. 2017 ; 卷 111, 編號 16.
@article{61c50e6424064da38bdb402d56e47b21,
title = "Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application",
abstract = "In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8{\%}/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.",
author = "Hsiao, {Chih Jen} and Kakkerla, {Ramesh Kumar} and Chang, {Po Chun} and Lumbantoruan, {Franky Juanda} and Lee, {Tsu Ting} and Lin, {Yueh Chin} and Chang, {Shoou Jinn} and Chang, {Edward Yi}",
year = "2017",
month = "10",
day = "16",
doi = "10.1063/1.5008737",
language = "English",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application. / Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi.

於: Applied Physics Letters, 卷 111, 編號 16, 162108, 16.10.2017.

研究成果: Article

TY - JOUR

T1 - Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application

AU - Hsiao, Chih Jen

AU - Kakkerla, Ramesh Kumar

AU - Chang, Po Chun

AU - Lumbantoruan, Franky Juanda

AU - Lee, Tsu Ting

AU - Lin, Yueh Chin

AU - Chang, Shoou Jinn

AU - Chang, Edward Yi

PY - 2017/10/16

Y1 - 2017/10/16

N2 - In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.

AB - In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 × 106 cm-2 and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm2 V-1s-1 with a carrier concentration of 1.2 × 1017 cm-3 is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future.

UR - http://www.scopus.com/inward/record.url?scp=85031998515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031998515&partnerID=8YFLogxK

U2 - 10.1063/1.5008737

DO - 10.1063/1.5008737

M3 - Article

AN - SCOPUS:85031998515

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162108

ER -