Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices

Chuan Pu Liu, Regime Chen, Yan Lin Lai

研究成果: Paper

摘要

The growth mode changing from two-dimensional to three-dimensional is promising in enhancing the efficiency of optical devices, such as light emitting diodes and laser. Thus, InCaN/GaN superlattice structures were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscope was used to obtain cross-sectional images of the samples. For the analysis of the layer structure, the ω -scans and rocking curves of x-ray diffraction were employed to examine strain, misorientation and periodicity of the supperlattice. The property of the origin of luminescence in the InGaN/GaN multiple quantum wells was determined by photoluminescence. The results show that high quality InGaN quantum dots in supperlattices are achieved, where the average size is 1-2 nm and the density is 9×1012 cm -2. The emitting wavelength can be varied by changing the growth rate for the active layers.

原文English
頁面16-20
頁數5
出版狀態Published - 2003 一月 1
事件State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
持續時間: 2003 十月 122003 十月 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
國家United States
城市Orlando,FL
期間03-10-1203-10-17

    指紋

All Science Journal Classification (ASJC) codes

  • Electrochemistry

引用此

Liu, C. P., Chen, R., & Lai, Y. L. (2003). Growth and characterization of InGaN quantum dots in InGaN/GaN superlattices. 16-20. 論文發表於 State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.