Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys

Y. Tung, Y. F. Chiang, C. W. Chong, Z. X. Deng, Y. C. Chen, J. C.A. Huang, C. M. Cheng, T. W. Pi, K. D. Tsuei, Z. Li, H. Qiu

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18 引文 斯高帕斯(Scopus)

摘要

We report a systematic study on the structural and electronic properties of Bi2Te3-xSex topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi2Se3 to Bi2Te3 was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi2Te3-xSex films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi2Te3-xSex with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi2Te3-xSex thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.

原文English
文章編號055303
期刊Journal of Applied Physics
119
發行號5
DOIs
出版狀態Published - 2016 二月 7

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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