TY - JOUR
T1 - Growth and characterization of ZnO nanonail
AU - Seo, H. W.
AU - Wang, D.
AU - Tzeng, Y.
AU - Sathitsuksanoh, N.
AU - Tin, C. C.
AU - Bozack, M. J.
AU - Williams, J. R.
AU - Park, M.
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - Zinc oxide (ZnO) is an interesting material for short-wavelength optoelectronics due to its wide band gap. The nanostructures of ZnO are also intriguing since a variety of morphology can be obtained by employing different processing parameters. In our laboratory, ZnO nanonails were successfully synthesized at low temperature using a thermal chemical vapor deposition. The morphology of the sample was studied by using scanning electron microscopy. The shape of the nail head can be controlled from hexagon to quasi-circular shape. X-ray diffraction, Raman scattering, photoluminescence spectroscopy were also performed to analyze the ZnO nanonail. Photoluminescence spectroscopy suggested that the defects in the ZnO nanonail and nanobone are of different nature.
AB - Zinc oxide (ZnO) is an interesting material for short-wavelength optoelectronics due to its wide band gap. The nanostructures of ZnO are also intriguing since a variety of morphology can be obtained by employing different processing parameters. In our laboratory, ZnO nanonails were successfully synthesized at low temperature using a thermal chemical vapor deposition. The morphology of the sample was studied by using scanning electron microscopy. The shape of the nail head can be controlled from hexagon to quasi-circular shape. X-ray diffraction, Raman scattering, photoluminescence spectroscopy were also performed to analyze the ZnO nanonail. Photoluminescence spectroscopy suggested that the defects in the ZnO nanonail and nanobone are of different nature.
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M3 - Conference article
AN - SCOPUS:20344364146
SN - 0272-9172
VL - 829
SP - 157
EP - 162
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
M1 - B2.26
T2 - Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications
Y2 - 29 November 2004 through 3 December 2004
ER -