@article{63c000329ed7476fa278bb0b2c5dd0d0,
title = "Growth and characterization of ZnSe/CdSe multiquantum disks",
abstract = "The authors report the growth of high-density ZnSe/CdSe multiquantum disks on oxidized Si substrate. It was found the as-grown nanotips were tapered with the mixture of cubic zinc blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/CdSe multiquantum disks were much larger than that observed from the homogeneous ZnSe. Furthermore, it was found that activation energies for the ZnSe/CdSe multiquantum disks with well widths Lw of 8, 12, and 16 nm were 22, 62, and 56 meV, respectively.",
author = "Chang, {S. J.} and Hsiao, {C. H.} and Hung, {S. C.} and Young, {S. J.} and Cheng, {Y. C.} and Huang, {B. R.} and Wang, {S. B.} and Chih, {S. H.} and Chen, {T. P.}",
note = "Funding Information: Manuscript received June 27, 2010; revised July 19, 2010; accepted July 21, 2010. Date of publication September 2, 2010; date of current version August 5, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, in part by the Ministry of Economic Affairs (MOEA) under Grant NSC 98-EC-17-A-09020769 and Grant NSC 98-2221-E158-006, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.",
year = "2011",
month = jul,
doi = "10.1109/JSTQE.2010.2061838",
language = "English",
volume = "17",
pages = "779--784",
journal = "IEEE Journal on Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}