Growth and photoelectric properties of twinned ZnSe1-xTe x nanotips

S. J. Chang, S. H. Chih, C. H. Hsiao, B. W. Lan, S. B. Wang, Y. C. Cheng, T. C. Li, S. P. Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The authors report the growth of high density ZnSe0.9Te 0.1 nanotips by molecular beam epitaxy and the fabrication of ZnSeTe nanotip photodetector. It was found that the as-grown ZnSe0.9Te 0.1 nanotips were twinned with alternative multidomains and mixture of cubic zinc-blende/hexagonal wurtzite phases. With 5-V applied bias, it was found that photocurrent to dark current contrast ratio of the fabricated photodetector was larger than 700.

原文English
文章編號5382566
頁(從 - 到)379-384
頁數6
期刊IEEE Transactions on Nanotechnology
10
發行號3
DOIs
出版狀態Published - 2011 5月

All Science Journal Classification (ASJC) codes

  • 電腦科學應用
  • 電氣與電子工程

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