GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.

Y. K. Su, C. Y. Chang, T. S. Wu, M. K. Lee, Mau-phon Houng, L. G. Chen

研究成果: Paper

原文English
頁面387-392
頁數6
出版狀態Published - 1981 十二月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此

Su, Y. K., Chang, C. Y., Wu, T. S., Lee, M. K., Houng, M., & Chen, L. G. (1981). GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.. 387-392.