Growth and properties of silicon films on aluminum-nitride films on sapphire

K. L. Wang, K. M. Lakin, J. K. Liu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Epitaxial layers of silicon have been grown on aluminum-nitride films on sapphire by vapor-phase deposition using pyrolysis of silane. The structure of the silicon films is examined by the reflection electron diffraction technique and shown to be a single crystal of orientation (100)Si∥ (112̄0)AlN∥ (011̄2)Al2O3. Lattice matching between Si and AlN along orthogonal axes of [100] Si are 0.78 and 9.0%, respectively. The growth and electrical properties of silicon films are described in some detail. Resistivity and mobility of p-type and n-type silicon films have been measured as functions of temperature. The maximum mobility of 150 cm2/V sec has been obtained for film thickness between 1 and 4 μm. The aluminum autodoping effect upon these films is found to be higher than that of silicon films on sapphire used as control samples.

原文English
頁(從 - 到)1580-1582
頁數3
期刊Journal of Applied Physics
47
發行號4
DOIs
出版狀態Published - 1976

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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