Growth and study of self-organized Ge quantum wires on Si(111) substrates

G. Jin, Y. S. Tang, J. L. Liu, K. L. Wang

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

Self-organized Ge quantum wires on Si(111) substrates were grown by forming regular atomic steps followed by Ge deposition. Optical studies of the Ge wires suggest that these wires have a built-in biaxial strain equivalent to about 1% lattice mismatch. In addition, quantized optical transitions due to the confinement in Ge wire are also observed.

原文English
頁(從 - 到)2471-2473
頁數3
期刊Applied Physics Letters
74
發行號17
DOIs
出版狀態Published - 1999 4月 26

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

指紋

深入研究「Growth and study of self-organized Ge quantum wires on Si(111) substrates」主題。共同形成了獨特的指紋。

引用此