Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by chemical vapor deposition

Mitch M.C. Chou, Liuwen Chang, Chenlong Chen, Wen Fu Yang, Chu An Li, Jih Jen Wu

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Nonpolar gallium nitride (GaN) epitaxial film was grown on a nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by a versatile chemical vapor deposition (CVD) method. LiAlO2 single crystal was grown by the Czochralski (Cz) method. Epi-ready LiAlO2 single-crystal substrate with RMS roughness of 0.24-0.32 nm were used for all experiments. The dependence of growth characteristics on the growth temperatures and deposition time was investigated. The orientation of GaN film was identified as (1 0 1̄ 0) m-plane by X-ray diffraction pattern. The characterization of detailed structure of the nonpolar GaN epilayer was done by transmission electron microscopy (TEM). Optical properties examined by photoluminescence spectra exhibit a strong near-band-edge emission peak at 3.37 eV and a weak yellow band emission.

原文English
頁(從 - 到)448-451
頁數4
期刊Journal of Crystal Growth
311
發行號3
DOIs
出版狀態Published - 2009 一月 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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