Growth characteristics of electrochemically deposited Cu2O thin film onto Pt/SiO2/Si substrate by galvanostatic technique

Yueh Hsun Lee, Ing Chi Leu, Kuan Zong Fung

研究成果: Conference contribution

摘要

In the present study, a dense and uniform Cu2O thin film was electrodeposited onto Pt/SiO2/Si substrate from alkaline solution of Cu (II) lactate at room temperature under a low current density of 0.05mA/cm2. The structural characterization using XRD indicated that the cuprous oxide film has a simple cubic structure. The X-ray photoelectron spectral (XPS) analysis also excluded the appearance of CuO. The surface morphologies formed from solutions with different pH values indicate that the nanocrystalline cuprous oxide was formed at the chosen pH range. With the increase of pH value of alkaline solution, from 9 and 10 to 11, the deposition rate increased from 3.5nm/min, 4.0nm/min to 4.3nm/min, respectively. It is believed that Cu2O was formed due to the reaction between Cu 2+ and OH-. Thus, the enhancement of Cu2O growth at the higher pH value during electrochemical deposition is expected.

原文English
主出版物標題Chemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium
頁面225-229
頁數5
出版狀態Published - 2006 七月 20
事件203rd Electrochemical Society Meeting - Paris, France
持續時間: 2003 四月 272003 五月 2

出版系列

名字Proceedings - Electrochemical Society
PV 2003-32

Other

Other203rd Electrochemical Society Meeting
國家France
城市Paris
期間03-04-2703-05-02

指紋

Thin films
Substrates
Photoelectrons
Deposition rates
Spectrum analysis
Oxide films
Surface morphology
Current density
X rays
Oxides
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Lee, Y. H., Leu, I. C., & Fung, K. Z. (2006). Growth characteristics of electrochemically deposited Cu2O thin film onto Pt/SiO2/Si substrate by galvanostatic technique. 於 Chemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium (頁 225-229). (Proceedings - Electrochemical Society; 卷 PV 2003-32).
Lee, Yueh Hsun ; Leu, Ing Chi ; Fung, Kuan Zong. / Growth characteristics of electrochemically deposited Cu2O thin film onto Pt/SiO2/Si substrate by galvanostatic technique. Chemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium. 2006. 頁 225-229 (Proceedings - Electrochemical Society).
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abstract = "In the present study, a dense and uniform Cu2O thin film was electrodeposited onto Pt/SiO2/Si substrate from alkaline solution of Cu (II) lactate at room temperature under a low current density of 0.05mA/cm2. The structural characterization using XRD indicated that the cuprous oxide film has a simple cubic structure. The X-ray photoelectron spectral (XPS) analysis also excluded the appearance of CuO. The surface morphologies formed from solutions with different pH values indicate that the nanocrystalline cuprous oxide was formed at the chosen pH range. With the increase of pH value of alkaline solution, from 9 and 10 to 11, the deposition rate increased from 3.5nm/min, 4.0nm/min to 4.3nm/min, respectively. It is believed that Cu2O was formed due to the reaction between Cu 2+ and OH-. Thus, the enhancement of Cu2O growth at the higher pH value during electrochemical deposition is expected.",
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Lee, YH, Leu, IC & Fung, KZ 2006, Growth characteristics of electrochemically deposited Cu2O thin film onto Pt/SiO2/Si substrate by galvanostatic technique. 於 Chemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium. Proceedings - Electrochemical Society, 卷 PV 2003-32, 頁 225-229, 203rd Electrochemical Society Meeting, Paris, France, 03-04-27.

Growth characteristics of electrochemically deposited Cu2O thin film onto Pt/SiO2/Si substrate by galvanostatic technique. / Lee, Yueh Hsun; Leu, Ing Chi; Fung, Kuan Zong.

Chemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium. 2006. p. 225-229 (Proceedings - Electrochemical Society; 卷 PV 2003-32).

研究成果: Conference contribution

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N2 - In the present study, a dense and uniform Cu2O thin film was electrodeposited onto Pt/SiO2/Si substrate from alkaline solution of Cu (II) lactate at room temperature under a low current density of 0.05mA/cm2. The structural characterization using XRD indicated that the cuprous oxide film has a simple cubic structure. The X-ray photoelectron spectral (XPS) analysis also excluded the appearance of CuO. The surface morphologies formed from solutions with different pH values indicate that the nanocrystalline cuprous oxide was formed at the chosen pH range. With the increase of pH value of alkaline solution, from 9 and 10 to 11, the deposition rate increased from 3.5nm/min, 4.0nm/min to 4.3nm/min, respectively. It is believed that Cu2O was formed due to the reaction between Cu 2+ and OH-. Thus, the enhancement of Cu2O growth at the higher pH value during electrochemical deposition is expected.

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Lee YH, Leu IC, Fung KZ. Growth characteristics of electrochemically deposited Cu2O thin film onto Pt/SiO2/Si substrate by galvanostatic technique. 於 Chemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium. 2006. p. 225-229. (Proceedings - Electrochemical Society).