Growth, characterization, and properties of carbon nitride with and without silicon addition

L. C. Chen, C. T. Wu, J. J. Wu, K. H. Chen

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.

原文English
頁(從 - 到)333-348
頁數16
期刊International Journal of Modern Physics B
14
發行號2-3
DOIs
出版狀態Published - 2000 一月 30

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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