Growth kinetics simulation of the Al-Ga self-organization on (100) GaAs vicinal surfaces

Yan Ten Lu; Pierre Petroff; Horia Metiu

doi:10.1063/1.103799

Growth kinetics simulation of the Al-Ga self-organization on (100) GaAs vicinal surfaces

Yan Ten Lu, Pierre Petroff, Horia Metiu

物理學系

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

We present results of a stochastic kinetic simulation of the segregation of Al and Ga during the mobility-enhanced epitaxial deposition on the As face of a stepped (100) GaAs surface.

原文	English
頁（從 - 到）	2683-2685
頁數	3
期刊	Applied Physics Letters
卷	57
發行號	25
DOIs	https://doi.org/10.1063/1.103799
出版狀態	Published - 1990

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.103799

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引用此

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abstract = "We present results of a stochastic kinetic simulation of the segregation of Al and Ga during the mobility-enhanced epitaxial deposition on the As face of a stepped (100) GaAs surface.",

author = "Lu, {Yan Ten} and Pierre Petroff and Horia Metiu",

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AU - Lu, Yan Ten

AU - Petroff, Pierre

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N2 - We present results of a stochastic kinetic simulation of the segregation of Al and Ga during the mobility-enhanced epitaxial deposition on the As face of a stepped (100) GaAs surface.

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JF - Applied Physics Letters

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Growth kinetics simulation of the Al-Ga self-organization on (100) GaAs vicinal surfaces

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