Growth mechanism and field emission characteristics of GaO/GaN nanotips using iodine-assisted enhanced focused ion beam etching

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Bohr Ran Huang, Bo Cheng Lin, Kuan Jen Chen, Tse Pu Chen, Wen I. Hsu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

GaN nanorods are fabricated with an AgO mask by a process of iodine-assisted focused ion beam etching (IFIBE). The transformation from GaN nanorod to GaN nanotip structure, the thermal treatment uses a high temperature of 800°C in air to increase the partial oxygen pressure resulting in the formation of a double mask, GaO and AgO. In addition, the Ag clusters react with the iodine gas to affect the etching rate and retain a GaO zone on the GaN nanotip arrays. Oxide-capped GaN nanotips can be applied as field emitter. The turn-on electric field was 2.2V/um when the current density was 0.1mA/cm2.

原文English
頁(從 - 到)594-597
頁數4
期刊Current Nanoscience
7
發行號4
DOIs
出版狀態Published - 2011 八月

All Science Journal Classification (ASJC) codes

  • 生物技術
  • 生物工程
  • 醫藥(雜項)
  • 生物醫學工程
  • 藥學科學

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