Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods

Z. H. Lan, W. M. Wang, C. L. Sun, S. C. Shi, C. W. Hsu, T. T. Chen, K. H. Chen, C. C. Chen, Y. F. Chen, L. C. Chen

研究成果: Conference article同行評審

97 引文 斯高帕斯(Scopus)

摘要

High-quality single crystal indium nitride nanorods were grown on Si substrates by catalytic chemical vapor deposition. Both Raman and high resolution transmission electron microscopic analyses suggested that even a minute amount of oxygen, from the residual oxygen in the growth environment and/or native oxide on the Si, would effectively help the growth of InN nanorods. The In2O3 formed on Au nanoparticles helped dissolve nitrogen as a catalyst with the subsequent growth of InN nanorods. Variations in the apparent color and photoluminescence (PL) spectra of the InN nanorods were observed. For the optically brown InN nanorods that exhibited diameters in the range of 30-50nm, the PL study showed a peak at 1.9eV, the possible origins of which are discussed. In contrast, for the optically black InN nanorods that exhibited diameters in the range of 50-100nm, the PL peak at approximately 0.766eV measured at 20K was attributed to band edge emission.

原文English
頁(從 - 到)87-94
頁數8
期刊Journal of Crystal Growth
269
發行號1
DOIs
出版狀態Published - 2004 八月 15
事件Proceedings of the First ONR International Indium Nitride Work - Fremantle, Australia
持續時間: 2003 十一月 162003 十一月 20

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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