Growth morphology and surface-acoustic-wave measurements of AIN films on sapphire

J. K. Liu, K. M. Lakin, K. L. Wang

研究成果: Article同行評審

94 引文 斯高帕斯(Scopus)

摘要

Aluminum nitride epitaxial films of thicknesses greater than 10 μ with excellent mechanical and chemical stability have been grown on R-plane sapphire substrates. The orientation relationship of single-crystal AlN on sapphire is discussed. Examination of the as-grown AlN film surface with a scanning electron microscope identifies the growth morphology and enables differentiation between good and poor quality films. The surface-acoustic-wave coupling constant K 2 and propagation velocity Vs are measured out to a thickness-to-wavelength ratio t/λ=0.75 with typical K2 values of 0.8% and Vs of 6.1 km/sec. Preliminary results also indicate that AlN-sapphire interfacial strain extends about 1 μ into the AlN film.

原文English
頁(從 - 到)3703-3706
頁數4
期刊Journal of Applied Physics
46
發行號9
DOIs
出版狀態Published - 1975

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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