Growth of 3C-SiC films on Si substrates by vapor-liquid-solid tri-phase epitaxy

Yu Ling Liang, Shih Zong Lu, Hsin Ying Lee, Xiaoding Qi, Jow Lay Huang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)


Cubic SiC films (3C-SiC) were deposited on (111) Si substrates by a vapor-liquid-solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and then methane (carbon source) was diffused into the liquid layer to react with Si, leading to the growth of SiC on the substrate. Copper showed some good properties as the flux, including high silicon and carbon solubility, low growth temperature and low volatility. Suitable growth parameters to go with the copper flux were identified, under which (111) textured 3C-SiC films were grown. Small numbers of (220) grains were observed to embed in the (111) films, which were difficult to avoid completely. Etching pits of the Cu melt on the substrate surface may act as the preferred sites for the growth of (220) grains.

頁(從 - 到)7640-7644
期刊Ceramics International
出版狀態Published - 2015 七月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 陶瓷和複合材料
  • 製程化學與技術
  • 表面、塗料和薄膜
  • 材料化學


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