Growth of chromium carbide capped-carbon nanotip using bias-assisted microwave plasma chemical vapor deposition

C. H. Hsu, S. C. Shi, C. F. Chen

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Chromium carbide capped-carbon nanotips were synthesized using bias-assisted microwave plasma chemical vapor deposition. Such a material grew up to several hundreds of nanometer long and tens of nanometer in diameter. The applied bias voltage is a significant parameter in the growth process whereas the higher bias voltage is effective in increasing the growth rate. However, the higher bias voltage also contributes to a rapid formation of chromium carbide which leads to a shorter length of carbon nanotip at the same time. Higher ion energies also vary the tip diameter due to strong ion bombardment which is a competitor to the deposition process. Our investigations revealed that the growth of chromium carbide capped-carbon nanotips reaches a limit due to the full carburization of chromium.

原文English
頁(從 - 到)131-134
頁數4
期刊Thin Solid Films
469-470
發行號SPEC. ISS.
DOIs
出版狀態Published - 2004 十二月 22

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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