Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures

Yu Song Cheng, Wan Ru Dai, Mau Phon Houng

研究成果: Conference contribution

摘要

We prepared CuInSe2 nanowire (NW) arrays in an electrolyte at temperatures ranging from 272 K to 318 K by using pulse electrodeposition techniques and an anodized aluminum oxide template. We photographed the detailed microstructures of CuInSe2 nanowire arrays with high-resolution transmission electron microscopy (HRTEM); the images showed the polycrystalline nature of the CuInSe2 nanowires made in electrolyte at a temperature of 318 K. The results of X-ray diffraction and scanning electron microscopy showed that the electrodeposition temperature constrained the CuInSe2 NW nucleation mechanism.

原文English
主出版物標題Proceedings of the 2017 IEEE International Conference on Applied System Innovation
主出版物子標題Applied System Innovation for Modern Technology, ICASI 2017
編輯Teen-Hang Meen, Artde Donald Kin-Tak Lam, Stephen D. Prior
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1367-1370
頁數4
ISBN(電子)9781509048977
DOIs
出版狀態Published - 2017 七月 21
事件2017 IEEE International Conference on Applied System Innovation, ICASI 2017 - Sapporo, Japan
持續時間: 2017 五月 132017 五月 17

出版系列

名字Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017

Other

Other2017 IEEE International Conference on Applied System Innovation, ICASI 2017
國家Japan
城市Sapporo
期間17-05-1317-05-17

指紋

Electroplating
Nanowires
Electrodeposition
electrodeposition
Electrolytes
nanowires
electrolytes
Temperature
Growth
pulses
temperature
Aluminum Oxide
High resolution transmission electron microscopy
Transmission Electron Microscopy
X-Ray Diffraction
Electron Scanning Microscopy
Nucleation
templates
aluminum oxides
nucleation

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Computer Science Applications
  • Hardware and Architecture
  • Safety, Risk, Reliability and Quality
  • Mechanical Engineering
  • Media Technology
  • Health Informatics
  • Instrumentation

引用此文

Cheng, Y. S., Dai, W. R., & Houng, M. P. (2017). Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures. 於 T-H. Meen, A. D. K-T. Lam, & S. D. Prior (編輯), Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017 (頁 1367-1370). [7988160] (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICASI.2017.7988160
Cheng, Yu Song ; Dai, Wan Ru ; Houng, Mau Phon. / Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures. Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. 編輯 / Teen-Hang Meen ; Artde Donald Kin-Tak Lam ; Stephen D. Prior. Institute of Electrical and Electronics Engineers Inc., 2017. 頁 1367-1370 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).
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title = "Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures",
abstract = "We prepared CuInSe2 nanowire (NW) arrays in an electrolyte at temperatures ranging from 272 K to 318 K by using pulse electrodeposition techniques and an anodized aluminum oxide template. We photographed the detailed microstructures of CuInSe2 nanowire arrays with high-resolution transmission electron microscopy (HRTEM); the images showed the polycrystalline nature of the CuInSe2 nanowires made in electrolyte at a temperature of 318 K. The results of X-ray diffraction and scanning electron microscopy showed that the electrodeposition temperature constrained the CuInSe2 NW nucleation mechanism.",
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Cheng, YS, Dai, WR & Houng, MP 2017, Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures. 於 T-H Meen, ADK-T Lam & SD Prior (編輯), Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017., 7988160, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017, Institute of Electrical and Electronics Engineers Inc., 頁 1367-1370, 2017 IEEE International Conference on Applied System Innovation, ICASI 2017, Sapporo, Japan, 17-05-13. https://doi.org/10.1109/ICASI.2017.7988160

Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures. / Cheng, Yu Song; Dai, Wan Ru; Houng, Mau Phon.

Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. 編輯 / Teen-Hang Meen; Artde Donald Kin-Tak Lam; Stephen D. Prior. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1367-1370 7988160 (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

研究成果: Conference contribution

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N2 - We prepared CuInSe2 nanowire (NW) arrays in an electrolyte at temperatures ranging from 272 K to 318 K by using pulse electrodeposition techniques and an anodized aluminum oxide template. We photographed the detailed microstructures of CuInSe2 nanowire arrays with high-resolution transmission electron microscopy (HRTEM); the images showed the polycrystalline nature of the CuInSe2 nanowires made in electrolyte at a temperature of 318 K. The results of X-ray diffraction and scanning electron microscopy showed that the electrodeposition temperature constrained the CuInSe2 NW nucleation mechanism.

AB - We prepared CuInSe2 nanowire (NW) arrays in an electrolyte at temperatures ranging from 272 K to 318 K by using pulse electrodeposition techniques and an anodized aluminum oxide template. We photographed the detailed microstructures of CuInSe2 nanowire arrays with high-resolution transmission electron microscopy (HRTEM); the images showed the polycrystalline nature of the CuInSe2 nanowires made in electrolyte at a temperature of 318 K. The results of X-ray diffraction and scanning electron microscopy showed that the electrodeposition temperature constrained the CuInSe2 NW nucleation mechanism.

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Cheng YS, Dai WR, Houng MP. Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures. 於 Meen T-H, Lam ADK-T, Prior SD, 編輯, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1367-1370. 7988160. (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017). https://doi.org/10.1109/ICASI.2017.7988160