Growth of diamond thin films by spiral hollow cathode plasma-assisted chemical vapor deposition

P. J. Kung, Yon-Hua Tzeng

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

A direct current spiral hollow cathode which combines hot-filament, electron-beam, and plasma-assisted chemical vapor deposition mechanisms has been developed to grow diamond crystallites and continuous thin films from CH 4/H2 [/Ar] gas mixtures. A comprehensive study of system parameters such as deposition time, gas pressure, susceptor temperature, methane concentration, distance between the cathode and the substrate, substrate material, and surface treatment indicates that diamond deposition in such a reaction is a composite process. By varying the susceptor temperature and gas pressure during deposition, the deposition process can be tailored in favor of the synthesis of structurally uniform diamond thin films. The deposits, obtained at a growth rate of about 1 μm/h, have been characterized using scanning electron microscopy, Raman spectroscopy, Auger spectroscopy, x-ray diffraction, reflection high-energy electron diffraction, infrared absorption spectroscopy, and current-voltage curve plotting.

原文English
頁(從 - 到)4676-4684
頁數9
期刊Journal of Applied Physics
66
發行號10
DOIs
出版狀態Published - 1989 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

指紋 深入研究「Growth of diamond thin films by spiral hollow cathode plasma-assisted chemical vapor deposition」主題。共同形成了獨特的指紋。

引用此