@article{15d8b249da1e4cdf936f1d545427cc07,
title = "Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer",
abstract = "This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.",
author = "Liu, {Kuang Wei} and Young, {Sheng Joue} and Chang, {Shoou Jinn} and Hsueh, {Tao Hung} and Hung Hung and Chen, {Shi Xiang} and Chen, {Yue Zhang}",
note = "Funding Information: This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), Taiwan (D97-2700), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education. Funding Information: This work was supported by National Science Council of Taiwan under Contract numbers NSC 100-2221-E-150-057, NSC 99-2218-E-150-003 and NSC 99-2622-E-150-012-CC3. National Formosa University Research and Services Headquarters that provided the partial equipment for measurement is also acknowledged. ",
year = "2012",
month = jan,
day = "15",
doi = "10.1016/j.jallcom.2011.08.025",
language = "English",
volume = "511",
pages = "1--4",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",
number = "1",
}