Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

Kuang Wei Liu, Sheng Joue Young, Shoou Jinn Chang, Tao Hung Hsueh, Hung Hung, Shi Xiang Chen, Yue Zhang Chen

研究成果: Article

5 引文 (Scopus)

摘要

This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

原文English
頁(從 - 到)1-4
頁數4
期刊Journal of Alloys and Compounds
511
發行號1
DOIs
出版狀態Published - 2012 一月 15

指紋

Gallium nitride
Chromium
Silicon
Molecular beam epitaxy
Nitrides
Epilayers
Electrons
Nitridation
Auger electron spectroscopy
Photoluminescence
Crystalline materials
X ray diffraction
Atoms
Substrates
gallium nitride

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

引用此文

Liu, Kuang Wei ; Young, Sheng Joue ; Chang, Shoou Jinn ; Hsueh, Tao Hung ; Hung, Hung ; Chen, Shi Xiang ; Chen, Yue Zhang. / Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer. 於: Journal of Alloys and Compounds. 2012 ; 卷 511, 編號 1. 頁 1-4.
@article{15d8b249da1e4cdf936f1d545427cc07,
title = "Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer",
abstract = "This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.",
author = "Liu, {Kuang Wei} and Young, {Sheng Joue} and Chang, {Shoou Jinn} and Hsueh, {Tao Hung} and Hung Hung and Chen, {Shi Xiang} and Chen, {Yue Zhang}",
year = "2012",
month = "1",
day = "15",
doi = "10.1016/j.jallcom.2011.08.025",
language = "English",
volume = "511",
pages = "1--4",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",
number = "1",

}

Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer. / Liu, Kuang Wei; Young, Sheng Joue; Chang, Shoou Jinn; Hsueh, Tao Hung; Hung, Hung; Chen, Shi Xiang; Chen, Yue Zhang.

於: Journal of Alloys and Compounds, 卷 511, 編號 1, 15.01.2012, p. 1-4.

研究成果: Article

TY - JOUR

T1 - Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

AU - Liu, Kuang Wei

AU - Young, Sheng Joue

AU - Chang, Shoou Jinn

AU - Hsueh, Tao Hung

AU - Hung, Hung

AU - Chen, Shi Xiang

AU - Chen, Yue Zhang

PY - 2012/1/15

Y1 - 2012/1/15

N2 - This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

AB - This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

UR - http://www.scopus.com/inward/record.url?scp=80054683405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054683405&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2011.08.025

DO - 10.1016/j.jallcom.2011.08.025

M3 - Article

AN - SCOPUS:80054683405

VL - 511

SP - 1

EP - 4

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

IS - 1

ER -