@article{b1ed02b05e2c46a383ac94e142ceb1fc,
title = "Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector",
abstract = "The authors report the growth of nanowires by heating the GaN/sapphire template. It was found that density, average length, and average diameter of the nanowires all increased as we increased the grown temperature. It was also found that β-Ga2O3 nanowires with good crystal quality could be achieved only at high temperatures (i.e., 1050 and 1100 °C). Solar-blind β-Ga2O3 nanowire photodetector was also fabricated by depositing interdigitated contact electrodes. With an incident light wavelength of 255 nm and an applied bias of 5 V, it was found that measured responsivity of the photodetector was 3.72×10-1 mA/W.",
author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {Shoou Jinn} and Huang, {G. J.} and Hung, {S. C.}",
note = "Funding Information: Manuscript received February 17, 2010; accepted December 28, 2010. Date of publication January 6, 2011; date of current version September 8, 2011. This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan. The review of this paper was arranged by Associate Editor G. Ramanath. Funding Information: The authors would like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financially supporting this research under Contract No. 98-D0204-6, and the LED Lighting and Research Center, NCKU, for the assistance in related measurements.",
year = "2011",
month = sep,
doi = "10.1109/TNANO.2011.2104366",
language = "English",
volume = "10",
pages = "1047--1052",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}